H10P 14/2913
Being group iib-via materials
Official title: {being Group IIB-VIA materials}
H10P14/2913 (Being group iib-via materials) appears on 227 US grants and 221 published applications in this corpus.
Search patents in H10P- Granted patents
- 227
- Published applications
- 221
- Assignees
- 139
- Inventors
- 462
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 5 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 3 |
| 2003 | 2 | 1 |
| 2004 | 0 | 4 |
| 2005 | 1 | 8 |
| 2006 | 7 | 6 |
| 2007 | 5 | 11 |
| 2008 | 4 | 14 |
| 2009 | 6 | 18 |
| 2010 | 7 | 21 |
| 2011 | 6 | 17 |
| 2012 | 12 | 6 |
| 2013 | 10 | 7 |
| 2014 | 9 | 9 |
| 2015 | 11 | 9 |
| 2016 | 9 | 7 |
| 2017 | 7 | 12 |
| 2018 | 10 | 7 |
| 2019 | 5 | 9 |
| 2020 | 11 | 9 |
| 2021 | 6 | 9 |
| 2022 | 9 | 7 |
| 2023 | 15 | 18 |
| 2024 | 6 | 4 |
| 2025 | 5 | 3 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same28 Apr 2026US 12,615,974 B2Samsung Electronics Co., Ltd.
- N-type 2D transition metal dichalcogenide (TMD) transistor14 Apr 2026US 12,604,500 B2HRL Laboratories, LLC
- Seed layer, a heterostructure comprising the seed layer and a method of forming a layer of material using the seed layer30 Sep 2025US 12,431,350 B2National University of Singapore
- Method of manufacturing a semiconductor device13 May 2025US 12,300,507 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-all-around integrated circuit structures having insulator substrate6 May 2025US 12,294,006 B2Intel Corporation
- Substrate processing method and substrate processing apparatus18 Jun 2026US 2026/0173777 A1Tokyo Electron Limited
- Method of manufacturing a semiconductor device11 Jun 2026US 2026/0165095 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-all-around integrated circuit structures having insulator substrate17 Jul 2025US 2025/0234646 A1Intel Corporation
- Semiconductor device15 May 2025US 2025/0159936 A1Semiconductor Energy Laboratory Co.Ltd.
- Method of forming a memory device in a recessed feature1 May 2025US 2025/0140551 A1Tokyo Electron Limited
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same88US 9,431,794 B2VerLASE Technologies LLC · 2016
- Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same86US 8,859,412 B2VerLASE Technologies LLC · 2014
- Polycrystalline thin film CdS/CdTe photovoltaic cell72US 4,207,119 AEastman Kodak Company · 1980
- Method for making thin film cadmium telluride and related semiconductors for solar cells53US 4,445,965 ACarnegie Mellon University · 1984