H10P 14/2914
Oxides
Official title: {Oxides}
H10P14/2914 (Oxides) appears on 97 US grants and 137 published applications in this corpus.
Search patents in H10P- Granted patents
- 97
- Published applications
- 137
- Assignees
- 77
- Inventors
- 247
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 4 |
| 2007 | 1 | 8 |
| 2008 | 2 | 8 |
| 2009 | 2 | 17 |
| 2010 | 5 | 19 |
| 2011 | 6 | 14 |
| 2012 | 9 | 4 |
| 2013 | 8 | 3 |
| 2014 | 7 | 4 |
| 2015 | 7 | 5 |
| 2016 | 4 | 3 |
| 2017 | 5 | 8 |
| 2018 | 6 | 6 |
| 2019 | 4 | 6 |
| 2020 | 8 | 8 |
| 2021 | 5 | 6 |
| 2022 | 4 | 3 |
| 2023 | 6 | 3 |
| 2024 | 1 | 1 |
| 2025 | 2 | 3 |
| 2026 | 1 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same28 Apr 2026US 12,615,974 B2Samsung Electronics Co., Ltd.
- Gate-all-around integrated circuit structures having insulator substrate6 May 2025US 12,294,006 B2Intel Corporation
- Semiconductor device4 Mar 2025US 12,243,943 B2Semiconductor Energy Laboratory Co.Ltd.
- Template-assisted synthesis of 2D nanosheets using nanoparticle templates23 Apr 2024US 11,964,879 B2Nanoco 2D Materials Limited
- Method of producing a two-dimensional material19 Dec 2023US 11,848,206 B2Paragraf Limited
- Substrate processing method and substrate processing apparatus18 Jun 2026US 2026/0173777 A1Tokyo Electron Limited
- Gate-all-around integrated circuit structures having insulator substrate17 Jul 2025US 2025/0234646 A1Intel Corporation
- Semiconductor device15 May 2025US 2025/0159936 A1Semiconductor Energy Laboratory Co.Ltd.
- Method of forming a memory device in a recessed feature1 May 2025US 2025/0140551 A1Tokyo Electron Limited
- Semiconductor device including common body bias region30 May 2024US 2024/0178213 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Oxide films and process for preparing same30US 6,342,313 B12002
- Homoepitaxial layers of p-type zinc oxide and the fabrication thereof24US 6,624,441 B2Eagle-Picher Technologies, LLC · 2003
- Semiconductor device and method for manufacturing the same20US 8,802,515 B2Semiconductor Energy Laboratory Co.Ltd. · 2014
- Semiconductor device20US 9,087,726 B2Semiconductor Energy Laboratory Co.Ltd. · 2015