Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an oxide semiconductor film over an insulating surface over a substrate;
• forming a gate insulating film covering the oxide semiconductor film;
• forming a conductive film over the gate insulating film;
• forming a gate electrode by processing the conductive film;
• forming a pair of oxynitride semiconductor regions in a region of the oxide semiconductor film, which does not overlap with the gate electrode, by implanting an ion including nitrogen into the oxide semiconductor film through the gate insulating film;
• forming a wiring connected to one of the pair of oxynitride semiconductor regions;
• and
• heating the substrate with a substrate temperature higher than or equal to 150 ° C. and lower than or equal to 600 ° C. after forming the pair of oxynitride semiconductor regions.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an oxide semiconductor film over an insulating surface over a substrate;
• forming a first insulating film covering the oxide semiconductor film;
• forming a conductive film over the first insulating film;
• forming a gate electrode and a gate insulating film from which a part of the oxide semiconductor film is exposed, by processing the conductive film and the first insulating film;
• forming a pair of oxynitride semiconductor regions in the part of the exposed oxide semiconductor film by implanting an ion including nitrogen into the oxide semiconductor film;
• forming a wiring connected to one of the pair of oxynitride semiconductor regions;
• and
• heating the substrate with a substrate temperature higher than or equal to 150 ° C. and lower than or equal to 600 ° C. after forming the pair of oxynitride semiconductor regions.