Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
AssigneeEagle-Picher Technologies, LLC
InventorsHenry E. Cantwell, David B. Eason
Life of this patent
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Abstract
A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate. The zinc oxide layer incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.
Claims26
A semiconductor structure comprising:
- a zinc oxide substrate;
- and
- a zinc oxide layer formed on said zinc oxide substrate, said zinc oxide layer including an atomic concentration of a p-type dopant and an atomic concentration of a compensating dopant sufficient to provide p-type conduction.
A semiconductor structure comprising:
- a zinc oxide substrate;
- a buffer layer of zinc oxide formed on said zinc oxide substrate;
- and
- a zinc oxide layer formed on said zinc oxide buffer layer, said zinc oxide layer including a first atomic concentration of a p-type dopant and a first atomic concentration of a compensating dopant sufficient to provide p-type conduction.
A semiconductor structure comprising:
- a zinc oxide substrate;
- a first zinc oxide layer formed on said zinc oxide substrate, said first zinc oxide layer including an atomic concentration of a p-type dopant and an atomic concentration of a compensating dopant sufficient to provide p-type conduction;
- and
- a second zinc oxide layer formed on said first zinc oxide layer, said second zinc oxide layer including an atomic concentration of an n-type dopant sufficient for providing n-type conduction.
A semiconductor structure comprising:
- a zinc oxide substrate;
- a first zinc oxide layer formed on said zinc oxide substrate, said first zinc oxide layer including a first atomic concentration of a p-type dopant sufficient to provide p-type conduction;
- and
- a second zinc oxide layer formed on said first zinc oxide layer, said second zinc oxide layer including a second atomic concentration of a p-type dopant sufficient for providing p-type conduction, said second atomic concentration differing from said first atomic concentration.
A semiconductor structure comprising:
- a zinc oxide substrate;
- and
- first and second zinc oxide layers formed on said zinc oxide substrate, at least one of said first and second zinc oxide layer including an atomic concentration of a p-type dopant sufficient to provide p-type conduction, and at least one of said first and second zinc oxide layers including an atomic concentration of a compensating element.
A semiconductor structure comprising:
- a single-crystal zinc oxide substrate;
- and
- a zinc oxide layer formed epitaxially on said zinc oxide substrate, said zinc oxide layer including a first atomic concentration of a p-type dopant and a second atomic concentration of a compensating dopant operative to electronically compensate for excess donors in said zinc oxide layer, said zinc oxide layer exhibiting p-type conduction.
Dependencies are inferred from the claim text.