Method of manufacturing semiconductor device, semiconductor device, and apparatus employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungwook Hwang, Junsik Hwang, Dongho Kim, Joonyong Park
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Abstract
A method of manufacturing a semiconductor device, including: forming a membrane forming pattern on a substrate; forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern; forming a membrane having a protruding pattern by crystallizing the membrane material layer; forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane; and transferring the 2D material pattern to a transfer substrate.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a membrane forming pattern on a substrate;
- forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern;
- forming a membrane having a protruding pattern by crystallizing the membrane material layer, wherein a width of the protruding pattern of the membrane is less than or equal to a grain size which is formed when the 2D material is grown;
- forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane;
- and
- transferring the 2D material pattern to a transfer substrate.
A method of manufacturing a semiconductor device, the method comprising:
- forming a membrane forming pattern on a substrate;
- forming a membrane material layer on the substrate, wherein the membrane material layer covers the membrane forming pattern;
- forming a membrane having a protruding pattern by crystallizing the membrane material layer,
- wherein a width of the protruding pattern of the membrane is less than or equal to a grain size which is formed when the 2D material is grown;
- forming a two-dimensional (2D) material pattern on the protruding pattern by growing a 2D material on the membrane;
- growing a semiconductor material on the 2D material pattern and forming a semiconductor device structure;
- and
- separating the semiconductor device structure from the substrate.
Dependencies are inferred from the claim text.