Substrate processing method and substrate processing apparatus

A substrate processing method comprising:

• (a) forming an adsorption layer by supplying a silicon-containing gas to a substrate having a depression formed therein and causing the silicon-containing gas to be adsorbed on the substrate;
• (b) etching at least a portion of the adsorption layer by supplying a shape control gas to the substrate on which the adsorption layer is formed;
• and
• (c) forming a silicon oxide film by supplying an oxygen-containing gas to the substrate on which the at least a portion of the adsorption layer is etched and causing the oxygen-containing gas to react with the adsorption layer,
• wherein a temperature of the substrate during (a) to (c) is 400 degrees C. or lower.

A substrate processing apparatus comprising:

• a process container configured to accommodate a substrate having a depression formed therein;
• a gas supply configured to supply gases to the process container;
• and
• a controller,
• wherein the controller is configured to execute a control to:
• (a) form an adsorption layer by supplying a silicon-containing gas to the substrate and causing the silicon-containing gas to be adsorbed on the substrate,
• (b) etch at least a portion of the adsorption layer by supplying a shape control gas to the substrate on which the adsorption layer is formed, and
• (c) form a silicon oxide film by supplying an oxygen-containing gas to the substrate on which the at least a portion of the adsorption layer is etched and causing the oxygen-containing gas to react with the adsorption layer,
• wherein a temperature of the substrate is controlled to be 400 degrees C. or lower during the execution of (a) to (c).