Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first spin-on carbon layer over a patterned surface of a substrate;
• forming a second spin-on carbon layer over the first spin-on carbon layer;
• crosslinking a portion of the first spin-on carbon layer and a portion of the second spin-on carbon layer by causing production of an acid in the first spin-on carbon layer and diffusion of the acid into the second spin-on carbon layer;
• removing a portion of the second spin-on carbon layer that is not crosslinked;
• and
• forming a planarizing layer over the second spin-on carbon layer after removing the portion of the second spin-on carbon layer that is not crosslinked.

A method of manufacturing a semiconductor device, comprising:

• forming a first planarizing layer over a patterned surface of a substrate, wherein the first planarizing layer comprises a spin-on carbon;
• forming a second planarizing layer over the first planarizing layer, wherein the second planarizing layer comprises a spin-on carbon;
• crosslinking a portion of the first planarizing layer and a portion of the second planarizing layer by causing production of an acid in the first planarizing layer and diffusion of the acid into the second planarizing layer;
• removing a portion of the second planarizing layer that is not crosslinked;
• and
• forming a third planarizing layer over the second planarizing layer after removing the portion of the second planarizing layer that is not crosslinked.