N-type 2D transition metal dichalcogenide (TMD) transistor
AssigneeHRL Laboratories, LLC
InventorsKyung-Ah Son, Jeong-Sun Moon, Hwa Chang Seo
Life of this patent
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Abstract
A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.
Claims17
A transition metal dichalcogenide (TMD) transistor, comprising:
- a substrate comprising a semiconductor material and having a top portion that is an insulating layer;
- an n-type two-dimensional (2D) TMD layer on the insulating layer, the n-type 2D TMD layer having a first side adjacent to the substrate and a second side opposite the first side;
- a metal source electrode, a metal drain electrode, and a gate dielectric on the second side of the n-type 2D TMD layer;
- and
- a metal gate electrode on top of the gate dielectric, wherein the metal gate electrode is between the metal source electrode and the metal drain electrode;
- wherein
- the substrate comprises an electrical device in the semiconductor material within the substrate.
A method for forming a transition metal dichalcogenide (TMD) transistor comprising:
- providing a substrate comprising a semiconductor material and having a top layer that is insulating;
- forming a two-dimensional (2D) TMD layer on the substrate, the n-type 2D TMD layer having a first side adjacent to the substrate and a second side opposite the first side;
- forming a metal source electrode and a metal drain electrode on the second side of the 2D TMD layer;
- forming a gate dielectric on the second side of the 2D TMD layer;
- and
- forming a metal gate electrode on the gate dielectric, wherein the metal gate electrode is between the metal source electrode and the metal drain electrode;
- wherein
- the substrate comprises an electrical device in the semiconductor material within the substrate.
Dependencies are inferred from the claim text.