H10P 14/2926
Crystal orientations
Official title: {Crystal orientations}
H10P14/2926 (Crystal orientations) appears on 1,871 US grants and 2,184 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,871
- Published applications
- 2,184
- Assignees
- 636
- Inventors
- 3,350
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 1 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 11 | 0 |
| 1988 | 2 | 0 |
| 1989 | 9 | 0 |
| 1990 | 15 | 0 |
| 1991 | 8 | 0 |
| 1992 | 13 | 0 |
| 1993 | 8 | 0 |
| 1994 | 16 | 0 |
| 1995 | 17 | 0 |
| 1996 | 10 | 0 |
| 1997 | 11 | 0 |
| 1998 | 16 | 0 |
| 1999 | 12 | 0 |
| 2000 | 19 | 0 |
| 2001 | 16 | 4 |
| 2002 | 14 | 38 |
| 2003 | 20 | 29 |
| 2004 | 15 | 25 |
| 2005 | 18 | 28 |
| 2006 | 23 | 48 |
| 2007 | 22 | 54 |
| 2008 | 29 | 73 |
| 2009 | 30 | 104 |
| 2010 | 63 | 97 |
| 2011 | 68 | 132 |
| 2012 | 97 | 107 |
| 2013 | 88 | 77 |
| 2014 | 121 | 120 |
| 2015 | 92 | 122 |
| 2016 | 118 | 116 |
| 2017 | 120 | 132 |
| 2018 | 94 | 111 |
| 2019 | 107 | 120 |
| 2020 | 102 | 103 |
| 2021 | 70 | 112 |
| 2022 | 68 | 105 |
| 2023 | 47 | 98 |
| 2024 | 96 | 101 |
| 2025 | 76 | 92 |
| 2026 | 47 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Composite substrate, manufacturing method thereof, and semiconductor device6 Oct 2026US 12,757,772 B2Enkris Semiconductor, Inc.
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same15 Sep 2026US 12,740,118 B2STMicroelectronics International N. V.
- Semiconductor structure and method27 Aug 2026US 2026/0255893 A1Turun Yliopisto
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- Deposition of ain on a silicon substrate and gan semiconductor transition layer structure6 Aug 2026US 2026/0231701 A1Epinovatech AB
- Structure comprising a high thermal conductivity boron arsenide layer, and method of manufacture23 Jul 2026US 2026/0209990 A1
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013
- Method of preparing silicon carbide surfaces for crystal growth490US 4,946,547 ACree Research, Inc. · 1990
- Semiconductor light-emitting device and semiconductor light-emitting device486US 7,087,932 B2Sony Corporation · 2006