US 2026/0231701 A1 · DEPOSITION OF AIN ON A SILICON SUBSTRATE AND GaN SEMICONDUCTOR TRANSITION LAYER STRUCTURE

Abstract

The present invention relates to a method for depositing AIN on a silicon substrate arranged in a process chamber. The method comprises: arranging an aluminum target in said process chamber; providing a process gas composition comprising a noble gas and nitrogen to said process chamber; ionizing said process gas composition by providing an electric field and a magnetic field such that a getter of noble gas ions and nitrogen ions is formed; sputtering said aluminum target while applying a positive bias on the silicon substrate; and depositing an epilayer of aluminum and nitrogen on the silicon substrate. The present invention further relates to a gallium nitride semiconductor transition layer structure comprising a AIN epilayer obtained by the method.

Claims18

Dependent claims

A method for depositing AlN on a silicon substrate having a crystallographic direction of <111>and being arranged in a process chamber, the method comprising:

arranging an aluminum target in said process chamber;
providing a process gas composition comprising a noble gas and nitrogen to said process chamber;
ionizing said process gas composition by providing an electric field and a magnetic field such that a getter of noble gas ions and nitrogen ions is formed;
sputtering said aluminum target while applying a positive bias on the silicon substrate;
and
depositing an epilayer of aluminum and nitrogen on the silicon substrate.

3 more elements

Dependencies are inferred from the claim text.

DEPOSITION OF AIN ON A SILICON SUBSTRATE AND GaN SEMICONDUCTOR TRANSITION LAYER STRUCTURE

Life of this patent

DEPOSITION OF AIN ON A SILICON SUBSTRATE AND GaN SEMICONDUCTOR TRANSITION LAYER STRUCTURE

Life of this patent

Abstract

Claims18