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US 12,757,472 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeeeun Yang, Sangwook Kim, Euntae Kim, Kwanghee Lee, Moonil Jung
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Abstract
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.
Claims15
A semiconductor device comprising:
- a substrate;
- a lower electrode on the substrate;
- a metal oxide on the lower electrode;
- a first buffer on the metal oxide;
- an oxide channel on the first buffer;
- a gate insulating layer contacting the oxide channel;
- a gate electrode contacting the gate insulating layer;
- and
- an upper electrode on the oxide channel, wherein
- the first buffer is between the metal oxide and the oxide channel, the first buffer includes a silicide material, the upper electrode and the lower electrode are spaced apart from each other in a perpendicular direction that is perpendicular to the substrate, and a longitudinal direction of the oxide channel is perpendicular to the substrate.
7 more elements
Dependencies are inferred from the claim text.