H10P 14/27
Using selective deposition
Official title: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}
H10P14/27 (Using selective deposition) appears on 4,149 US grants and 4,364 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,149
- Published applications
- 4,364
- Assignees
- 868
- Inventors
- 6,357
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 6 | 0 |
| 1978 | 9 | 0 |
| 1979 | 5 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 5 | 0 |
| 1984 | 9 | 0 |
| 1985 | 16 | 0 |
| 1986 | 15 | 0 |
| 1987 | 14 | 0 |
| 1988 | 11 | 0 |
| 1989 | 16 | 0 |
| 1990 | 16 | 0 |
| 1991 | 21 | 0 |
| 1992 | 30 | 0 |
| 1993 | 32 | 0 |
| 1994 | 46 | 0 |
| 1995 | 27 | 0 |
| 1996 | 19 | 0 |
| 1997 | 18 | 0 |
| 1998 | 31 | 0 |
| 1999 | 31 | 0 |
| 2000 | 23 | 0 |
| 2001 | 38 | 26 |
| 2002 | 53 | 70 |
| 2003 | 50 | 73 |
| 2004 | 58 | 81 |
| 2005 | 65 | 118 |
| 2006 | 72 | 121 |
| 2007 | 68 | 143 |
| 2008 | 80 | 140 |
| 2009 | 92 | 147 |
| 2010 | 141 | 178 |
| 2011 | 118 | 198 |
| 2012 | 154 | 217 |
| 2013 | 169 | 184 |
| 2014 | 228 | 236 |
| 2015 | 234 | 275 |
| 2016 | 300 | 277 |
| 2017 | 292 | 310 |
| 2018 | 235 | 199 |
| 2019 | 250 | 255 |
| 2020 | 245 | 248 |
| 2021 | 193 | 219 |
| 2022 | 160 | 194 |
| 2023 | 150 | 165 |
| 2024 | 126 | 134 |
| 2025 | 107 | 114 |
| 2026 | 54 | 42 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Methods and devices for 3D NAND using silicon-and-halogen-containing materials8 Sep 2026US 12,733,164 B2APPLIED Materials.Inc.
- Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device8 Sep 2026US 12,733,413 B2Boe Technology Group Co., Ltd.
- Method for semiconductor processing8 Sep 2026US 12,733,414 B2Tokyo Electron Limited
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fin structure with reduced defects and manufacturing method thereof1 Oct 2026US 2026/0305194 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor substrate, and method for manufacturing semiconductor substrate17 Sep 2026US 2026/0282479 A1KYOCERA Corporation
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013