Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device

A method for manufacturing a nanowire, comprising:

• preparing an insulating layer on a first surface of a substrate;
• preparing a sacrificial layer on a surface of the insulating layer away from the substrate, and patterning the sacrificial layer to form a guide trench;
• preparing an inducing particle in the guide trench;
• preparing a precipitation layer on a surface of the sacrificial layer away from the substrate and in the guide trench, the precipitation layer covering the inducing particle;
• processing the precipitation layer to precipitate a preset element in the precipitation layer along the guide trench under an induction of the inducing particle to form a nanowire;
• and
• removing the sacrificial layer, wherein
• the method further comprising:
• before preparing the inducing particle in the guide trench, processing the sacrificial layer through an ion implantation so as to form a porous structure in a surface layer of the sacrificial layer away from the substrate, wherein a material of the sacrificial layer comprises one of a positive photoresist or a negative photoresist.

A thin film transistor, comprising:

• a substrate comprising a first surface;
• an insulating layer arranged on the first surface of the substrate;
• a nanowire arranged on a surface of the insulating layer away from the substrate;
• an electrode layer superposed on the surface of the insulating layer away from the substrate, wherein a first electrode arranged in the electrode layer is electrically connected with a source region of the nanowire, and a second electrode arranged in the electrode layer is electrically connected with a drain region of the nanowire wherein
• the insulating layer comprises a first portion having an orthographic projection on the substrate coincident with an orthographic projection of the nanowire on the substrate, the first portion is doped with at least one of phosphorus ions or boron ions.