H10P 14/276
Lateral overgrowth
Official title: {Lateral overgrowth}
H10P14/276 (Lateral overgrowth) appears on 1,094 US grants and 1,262 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,094
- Published applications
- 1,262
- Assignees
- 345
- Inventors
- 1,813
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 10 | 0 |
| 1996 | 6 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 9 | 18 |
| 2002 | 23 | 44 |
| 2003 | 31 | 42 |
| 2004 | 39 | 34 |
| 2005 | 31 | 44 |
| 2006 | 24 | 31 |
| 2007 | 27 | 46 |
| 2008 | 22 | 49 |
| 2009 | 31 | 41 |
| 2010 | 40 | 66 |
| 2011 | 32 | 60 |
| 2012 | 64 | 95 |
| 2013 | 57 | 61 |
| 2014 | 71 | 68 |
| 2015 | 74 | 74 |
| 2016 | 78 | 68 |
| 2017 | 65 | 93 |
| 2018 | 60 | 40 |
| 2019 | 62 | 40 |
| 2020 | 32 | 33 |
| 2021 | 32 | 38 |
| 2022 | 28 | 46 |
| 2023 | 20 | 48 |
| 2024 | 30 | 39 |
| 2025 | 31 | 30 |
| 2026 | 11 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Semiconductor structures with adjustable light-emitting wavelengths and manufacturing methods thereof4 Aug 2026US 12,701,827 B2Enkris Semiconductor, Inc.
- Hetero epitaxial structure and method therefor16 Jun 2026US 12,660,269 B2ThinSiC Inc.
- Large area synthesis of cubic phase gallium nitride on silicon21 Apr 2026US 12,610,762 B2The Board of Trustees of the University of Illinois
- Method for producing a continuous nitride layer7 Apr 2026US 12,598,924 B2Centre National De La Recherche Scientifique
- Semiconductor substrate, and method for manufacturing semiconductor substrate17 Sep 2026US 2026/0282479 A1KYOCERA Corporation
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Large-area semiconductor device realized through a single domain and method of manufacturing the same25 Jun 2026US 2026/0182265 A1Myongji University Industry and Academia Cooperation Foundation
- Method for Altering the Carrier Concentration of a Two-Dimensional Electron Gas25 Jun 2026US 2026/0182317 A1National Chung Shan Institute of Science and Technology
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates497US 6,177,688 B1North Carolina State University · 2001
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby260US 7,727,332 B2Freiberger Compound Materials GmbH · 2010
- Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer258US 6,051,849 ANorth Carolina State University · 2000