Method for producing a continuous nitride layer

A method for obtaining a continuous nitride layer, at least partially made of a nitride, the method comprising:

• providing a stack comprising at least one assembly of pads extending from a substrate, each pad comprising at least:
• a creep section, formed in an amorphous material having a vitreous transition temperature Tvitreous transition;
• and
• a crystalline section, surmounting the creep section;
• and
• epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until coalescence of the crystallites carried by the pads of the assembly of pads, so as to form the continuous nitride layer,
• wherein the pads of said assembly of pads are distributed over the substrate such that a relative arrangement of the pads of the assembly of pads is such that during the epitaxy of the crystallites, the coalescence of the crystallites is always done between, on the one hand, a coalesced assembly comprising a crystallite or a plurality of coalesced crystallites and, on the other hand, at least one isolated crystallite, not having already coalesced with other crystallites.