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US 2026/0282479 A1Published application
Semiconductor substrate, and method for manufacturing semiconductor substrate
AssigneeKYOCERA Corporation
InventorsTakeshi KAMIKAWA, Noboru SUDA, Fumio YAMASHITA, Yuta AOKI, Mitsunari SEIDA
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Abstract
A semiconductor substrate includes: a main substrate; a seed pattern that is located above the main substrate and includes a first region; and a first semiconductor part extending from the first region, wherein the main substrate is a substrate made of a bulk crystal that is not a nitride semiconductor, and part of a surface of the main substrate is a non-seed region that does not overlap the seed pattern in plan view.
Claims15
-21 (canceled)
A method for manufacturing a semiconductor substrate, comprising:
- preparing a semiconductor substrate including:
- a main substrate,
- an underlying layer, which is located above the main substrate and contains a nitride semiconductor as a main constituent,
- wherein the underlying layer comprises a seed region and a growth region, an argon concentration of the growth suppression region is higher than an argon concentration of the seed region;
- and
- forming a semiconductor part from the seed region, the semiconductor part contains a nitride semiconductor.
3 more elements
A semiconductor substrate comprising:
- a main substrate;
- an underlying layer, which is located above the main substrate and contains a nitride semiconductor as a main constituent;
- a semiconductor part located in the underlying layer and containing a nitride semiconductor, wherein
- the underlying layer comprises a seed region and a growth region, an argon concentration of the growth suppression region is higher than an argon concentration of the seed region, and
- the semiconductor part comprises a base portion elongated upward from the seed region and a wing portion elongated from the base portion over the growth suppression region.
2 more elements
Dependencies are inferred from the claim text.