Large area synthesis of cubic phase gallium nitride on silicon
AssigneeThe Board of Trustees of the University of Illinois
InventorsCan Bayram, Muhammad Ali Johar
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Abstract
A wafer includes a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-based structures having vertical sidewalls disposed within and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111).
Claims16
A wafer comprising:
- a buried substrate;
- a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate;
- a buffer layer disposed within the multiple U-shaped grooves;
- and
- multiple gallium nitride (GaN)-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein an upper layer of the c-GaN is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
A wafer comprising:
- a buried substrate;
- a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate;
- a buffer layer disposed on top of the layer of silicon (100) within the multiple U-shaped grooves;
- and
- multiple gallium nitride (GaN)-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein at least sidewall portions of the h-GaN of the multiple GaN-based structures are wet-etched, wherein an upper layer of the c-GaN is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
A wafer comprising:
- a buried substrate;
- a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate;
- a buffer layer disposed within the multiple U-shaped grooves;
- and
- multiple Group-III nitride-based structures having steeply angled sidewalls disposed on and protruding above the multiple U-shaped grooves, the multiple Group-III nitride-based structures each including a cubic Group-III nitride formed at merged growth fronts of hexagonal Group-III nitride that extend from the silicon sidewalls (111), wherein an upper layer of the cubic Group-III nitride is parallel to the layer of silicon (100), is free of threading dislocations, and comprises one or more stacking faults.
Dependencies are inferred from the claim text.