Semiconductor structures with adjustable light-emitting wavelengths and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorsKai Cheng, Liyang Zhang
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Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a silicon substrate having several through-silicon-vias therein; a first semiconductor layer located in each through-silicon-via and on the silicon substrate, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer, where a conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, a material of the first semiconductor layer a group III nitride, a material of the active layer a group III nitride, and a material of the second semiconductor layer include a group III nitride.
Claims18
A semiconductor structure, comprising:
- a silicon substrate provided with one or more through-silicon-vias in the silicon substrate;
- a first semiconductor layer located in each of the one or more through-silicon-vias and on the silicon substrate;
- an active layer located on the first semiconductor layer, wherein the active layer is located on a top surface of the first semiconductor layer;
- and
- a second semiconductor layer located on the active layer,
- wherein a conductivity type of the second semiconductor layer is opposite to a conductivity type of the first semiconductor layer, a material of the first semiconductor layer comprises a group III nitride, a material of the active layer comprises a group III nitride, and a material of the second semiconductor layer comprises a group III nitride;
- wherein the active layer includes an indium element;
- and
- wherein a composition ratio of the indium element in the active layer increases as a size of the top surface of the first semiconductor layer decreases and the composition ratio of the indium element in the active layer decreases as the size of the top surface of the first semiconductor layer increases.
A method of manufacturing a semiconductor structure, comprising:
- providing a silicon substrate, providing a group III nitride epitaxial layer located on a first substrate;
- and providing a bonding layer between the group III nitride epitaxial layer and the silicon substrate, the group III nitride epitaxial layer and the silicon substrate being bonded together through the bonding layer;
- patterning the silicon substrate and the bonding layer to respectively form one or more through-silicon-vias and one or more first through-holes each corresponding to one of the one or more through-silicon-vias, each of the one or more first through-holes exposing the group III nitride epitaxial layer, each of the one or more through-silicon-vias communicating with a corresponding first through-hole;
- epitaxially growing the group III nitride epitaxial layer to form a first semiconductor layer in each of the one or more first through-holes and each of the one or more through-silicon-vias and on the patterned silicon substrate;
- and
- epitaxially growing an active layer and a second semiconductor layer on the first semiconductor layer in sequence, a conductivity type of the second semiconductor layer being opposite to a conductivity type of the first semiconductor layer, a material of the first semiconductor layer comprising a group III nitride, a material of the active layer comprising a group III nitride, and a material of the second semiconductor layer comprising a group III nitride.
Dependencies are inferred from the claim text.