H10P 14/278
Pendeoepitaxy
Official title: {Pendeoepitaxy}
H10P14/278 (Pendeoepitaxy) appears on 293 US grants and 368 published applications in this corpus.
Search patents in H10P- Granted patents
- 293
- Published applications
- 368
- Assignees
- 133
- Inventors
- 559
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 4 | 6 |
| 2002 | 7 | 13 |
| 2003 | 8 | 15 |
| 2004 | 14 | 18 |
| 2005 | 12 | 7 |
| 2006 | 8 | 9 |
| 2007 | 5 | 14 |
| 2008 | 7 | 19 |
| 2009 | 11 | 9 |
| 2010 | 15 | 23 |
| 2011 | 10 | 16 |
| 2012 | 10 | 30 |
| 2013 | 15 | 17 |
| 2014 | 24 | 15 |
| 2015 | 15 | 16 |
| 2016 | 14 | 17 |
| 2017 | 18 | 27 |
| 2018 | 20 | 12 |
| 2019 | 20 | 11 |
| 2020 | 6 | 9 |
| 2021 | 8 | 10 |
| 2022 | 12 | 18 |
| 2023 | 7 | 12 |
| 2024 | 9 | 14 |
| 2025 | 10 | 10 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Large area synthesis of cubic phase gallium nitride on silicon21 Apr 2026US 12,610,762 B2The Board of Trustees of the University of Illinois
- Method for producing a continuous nitride layer7 Apr 2026US 12,598,924 B2Centre National De La Recherche Scientifique
- Variable composition ternary compound semiconductor alloys, structures, and devices11 Nov 2025US 12,471,428 B2Opnovix Corp.
- Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate4 Nov 2025US 12,463,033 B2KYOCERA Corporation
- Semiconductor structure and manufacturing method thereof14 Oct 2025US 12,446,244 B2Enkris Semiconductor, Inc.
- Variable composition ternary compound semiconductor alloys, structures, and devices5 Feb 2026US 2026/0040742 A1Opnovix Corp.
- Large area synthesis of cubic phase gallium nitride on silicon18 Dec 2025US 2025/0385099 A1The Board of Trustees of the University of Illinois
- Semiconductor device and manufacturing method thereof, chip, and electronic device18 Dec 2025US 2025/0386563 A1Huawei Technologies Co., Ltd.
- Composite substrate and manufacturing method for the same13 Nov 2025US 2025/0351496 A1Enkris Semiconductor, Inc.
- Method of manufacturing a semiconductor device and a semiconductor device18 Sep 2025US 2025/0294819 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates497US 6,177,688 B1North Carolina State University · 2001
- Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby260US 7,727,332 B2Freiberger Compound Materials GmbH · 2010
- Methods of forming a plurality of semiconductor layers using spaced trench arrays193US 6,261,929 B1North Carolina State University · 2001
- Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby169US 6,255,198 B1North Carolina State University · 2001
- Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates155US 6,521,514 B1North Carolina State University · 2003