Variable composition ternary compound semiconductor alloys, structures, and devices

A semiconductor device comprising a multi-wavelength optoelectronic element, wherein the multi-wavelength optoelectronic element comprises:

• (a) a substrate comprising a first substrate region and a second substrate region;
• (b) a first Inx1Aly1Ga1-x1-y1N growth layer comprising a first (0001) Inx1Aly1Ga1-x1-y1N growth region overlying the first substrate region;
• and
• a first optoelectronic element overlying the first (0001) Inx1Aly1Ga1-x1-y1N growth region;
• and
• (c) a second patterned Inx2sAly2sGa1-x2s-y2sN seed region comprising a plurality of seed regions overlying the second substrate region, wherein each of the seed regions of the second patterned Inx2sAly2sGa1-x2s-y2sN seed region is six sided with a hexagonal base and triangular facets that are each coplanar with one of the {1-101} equivalent planes;
• a second Inx2Aly2Ga1-x2-y2N growth layer comprising a second (0001) Inx2Aly2Ga1-x2-y2N growth region overlying the second patterned Inx2sAly2sGa1-x2s-y2sN seed region;
• and
• a second optoelectronic element overlying the second (0001) Inx2Aly2Ga1-x2-y2N growth region,
• wherein
• the first (0001) Inx1Aly1Ga1-x1-y1N growth region is characterized by a first in-plane a-lattice parameter;
• the second (0001) Inx2Aly2Ga1-x2-y2N growth region is characterized by a second in-plane a-lattice parameter;
• the second in-plane a-lattice parameter is greater than the first in-plane a-lattice parameter;
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