Composite substrate and manufacturing method for the same
AssigneeEnkris Semiconductor, Inc.
InventorKai CHENG
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Abstract
A manufacturing method includes: growing a group III nitride layer on a supporting substrate; bonding the group III nitride layer to a target substrate having a dielectric layer on a surface of the target substrate; removing the supporting substrate; and forming a plurality of hexagonal nanopores arranged at intervals on a side, away from the target substrate, of the group III nitride layer. The technical solutions of the present disclosure may reduce a stress caused by lattice mismatch and thermal mismatch between the group III nitride layer and a substrate, thereby improving a quality of a group III nitride substrate.
Claims20
A manufacturing method for a composite substrate, comprising:
- growing a group III nitride layer on a supporting substrate;
- bonding the group III nitride layer to a target substrate having a dielectric layer on a surface of the target substrate;
- removing the supporting substrate;
- and
- forming a plurality of hexagonal nanopores arranged at intervals on a side, away from the target substrate, of the group III nitride layer.
A composite substrate, comprising:
- a target substrate, a dielectric layer and a group III nitride layer which are sequentially stacked, wherein a side, away from the target substrate, of the group III nitride layer comprises a plurality of hexagonal nanopores arranged at intervals.
Dependencies are inferred from the claim text.