Methods of forming a plurality of semiconductor layers using spaced trench arrays

A method of forming a semiconductor substrate, comprising the steps of:

• forming a first selective growth region as a first plurality of trenches in a gallium nitride seed layer;
• forming a second selective growth region as a second plurality of trenches in the gallium nitride seed layer;
• pendeoepitaxially growing a first continuous gallium nitride layer from sidewalls of the first plurality of trenches;
• pendeoepitaxially growing a second continuous gallium nitride layer from sidewalls of the second plurality of trenches;
• and
• partitioning the gallium nitride seed layer between the first plurality of trenches and the second plurality of trenches, to define a first substrate comprising the first continuous gallium nitride layer and a second substrate comprising the second continuous gallium nitride layer.

A method of forming a plurality of gallium nitride substrates, comprising the steps of:

• forming a plurality of trench arrays at spaced locations in a gallium nitride seed layer, each of said plurality of trench arrays spaced from another trench array by a respective dicing trench;
• pendeoepitaxially growing a respective gallium nitride layer on each of the trench arrays;
• and
• dividing the gallium nitride seed layer into a plurality of gallium nitride substrates by dicing the gallium nitride seed layer along a dicing street defined by a dicing trench.

A method of forming a plurality of compound semiconductor substrates, comprising the steps of:

• forming a plurality of trench arrays at spaced locations in a compound semiconductor seed layer;
• growing a respective compound semiconductor layer on each of the trench arrays;
• and
• dividing the compound semiconductor seed layer into a plurality of compound semiconductor substrates by dicing the compound semiconductor seed layer along dicing streets extending between the plurality of trench arrays.

A method of forming a semiconductor substrate, comprising the steps of:

• forming first and second semiconductor growth regions that are spaced apart by a dicing trench, on a supporting substrate comprising a semiconductor seed layer, said first semiconductor growth region comprising a first plurality of trenches that extend into the semiconductor seed layer,
• simultaneously epitaxially growing first and second continuous semiconductor layers that are spaced apart from each other but overhang a bottom of the dicing trench, from the first and second semiconductor growth regions, respectively, and without forming an epitaxial growth mask in the dicing trench;
• and
• forming first and second semiconductor substrates comprising the first and second continuous semiconductor layers, respectively, by dicing the supporting substrate along the dicing trench.

A method of forming a semiconductor substrate, comprising the steps of:

• forming a plurality of selective growth regions at spaced locations on a first substrate, by forming a first selective growth region as a first plurality of trenches in the first substrate and forming a second selective growth region as a second plurality of trenches in the first substrate;
• forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a first continuous semiconductor layer from at least portions of first mesas defined by the first plurality of trenches and growing a second continuous semiconductor layer from at least portions of second mesas defined by the second plurality of trenches;
• and
• dividing the first substrate into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers, by partitioning the first substrate between the selective growth regions.