Semiconductor structure and manufacturing method thereof
AssigneeEnkris Semiconductor, Inc.
InventorsKai Cheng, Peng Xiang
Life of this patent
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Abstract
A semiconductor structure and a manufacturing method thereof are provided in the present disclosure. The semiconductor structure includes a semiconductor substrate; a plurality of stacked structures and a plurality of isolation structures on the semiconductor substrate, wherein the stacked structures are spaced apart each other, and each of the isolation structures are located between adjacent stacked structures; each of the stacked structures comprises a nucleation layer and a first epitaxial layer from bottom to top; and a heterojunction structure on the plurality of stacked structures, wherein the heterojunction structure is distributed over an entire surface, and an air gap is formed between the heterojunction structure and each of the isolation structures.
Claims14
A semiconductor structure, comprising:
- a semiconductor substrate;
- a plurality of stacked structures and a plurality of isolation structures on the semiconductor substrate, wherein the stacked structures are spaced apart each other, each of the isolation structures is located between adjacent stacked structures, each of the stacked structures comprises a nucleation layer and a first epitaxial layer from bottom to top;
- and
- a heterojunction structure on the plurality of stacked structures, wherein the heterojunction structure is distributed over an entire surface, and an air gap is formed between the heterojunction structure and each of the isolation structures.
Dependencies are inferred from the claim text.