Method for semiconductor processing
AssigneeTokyo Electron Limited
InventorsHunter Frost, Kandabara Tapily, Tek Po Rinus Lee
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Abstract
A method for semiconductor processing includes forming a first film over a first region of a substrate. A second region of the substrate remains substantially free of the first film. The second region is adjacent to the first region. The method further includes performing a plasma treatment over the substrate and selectively depositing a second film over the first film. The first film blocks radicals from the first region during the plasma treatment. The second region of the substrate remains substantially free of the second film.
Claims20
A method for semiconductor processing, the method comprising:
- forming a first film over a first region of a substrate, a second region of the substrate remaining substantially free of the first film, the second region being adjacent to the first region;
- performing a plasma treatment over the substrate, the first film blocking radicals from the first region during the plasma treatment;
- and
- after performing the plasma treatment, selectively depositing a second film over the first film, the second region of the substrate remaining substantially free of the second film.
A method for an area selective deposition process, the method comprising:
- forming a pre-coat film over a substrate, the substrate comprising a first layer and a second layer adjacent to the first layer, the second layer comprising a material different from the first layer, wherein the pre-coat film is formed to a greater thickness over the second layer than over the first layer;
- performing a surface modification on the first layer with a radical plasma treatment;
- and
- after performing the surface modification, forming a film over the pre-coat film, wherein the film is formed to a greater thickness over the pre-coat film than over the first layer.
A method for manufacturing a semiconductor structure, the method comprising:
- providing a substrate into a processing chamber, the substrate comprising a first layer and a second layer;
- forming a first film over the substrate with a first ALD process, the first ALD process being selective to the second layer over the first layer;
- performing a plasma process on the substrate, the plasma process modifying a top surface of the first layer, the first film shielding the second layer from radicals of the plasma process;
- and
- after performing the plasma process on the substrate, forming a second film over the substrate with a second ALD process, the second ALD process being selective to the first film over the modified top surface of the first layer.
Dependencies are inferred from the claim text.