H10P 14/279
Vapour-liquid-solid growth
Official title: {Vapour-liquid-solid growth}
H10P14/279 (Vapour-liquid-solid growth) appears on 184 US grants and 232 published applications in this corpus.
Search patents in H10P- Granted patents
- 184
- Published applications
- 232
- Assignees
- 110
- Inventors
- 419
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 3 |
| 2003 | 1 | 2 |
| 2004 | 0 | 2 |
| 2005 | 1 | 10 |
| 2006 | 4 | 11 |
| 2007 | 10 | 13 |
| 2008 | 9 | 18 |
| 2009 | 10 | 19 |
| 2010 | 17 | 23 |
| 2011 | 13 | 24 |
| 2012 | 14 | 13 |
| 2013 | 16 | 11 |
| 2014 | 14 | 17 |
| 2015 | 10 | 12 |
| 2016 | 7 | 12 |
| 2017 | 10 | 12 |
| 2018 | 8 | 7 |
| 2019 | 10 | 2 |
| 2020 | 7 | 6 |
| 2021 | 5 | 7 |
| 2022 | 4 | 2 |
| 2023 | 5 | 2 |
| 2024 | 0 | 1 |
| 2025 | 1 | 2 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy1 Apr 2025US 12,266,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Oct 2023US 11,784,045 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Assembly for the deposition of silicon nanostructures8 Aug 2023US 11,718,909 B2Universita' Degli Studi Di Roma “La Sapienza”
- Methods for depositing III-alloys on substrates and compositions therefrom8 Aug 2023US 11,721,550 B2United States Department of Energy
- Nanowire device with mask layer5 Mar 2026US 2026/0068361 A1Crayonano AS
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy10 Jul 2025US 2025/0226217 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor memory device29 May 2025US 2025/0176156 A1Samsung Electronics Co., Ltd.
- Formation of single crystal semiconductors using planar vapor liquid solid epitaxy25 Jan 2024US 2024/0030027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device21 Sep 2023US 2023/0299173 A1STMicroelectronics S,r.l.
Most cited
By later US patents
- Nanowires, nanostructures and devices fabricated therefrom394US 6,882,051 B2The Regents of the University of California · 2005
- Methods of fabricating nanostructures and nanowires and devices fabricated therefrom247US 6,996,147 B2The Regents of the University of California · 2006
- Method of forming vertical FET with nanowire channels and a silicided bottom contact139US 7,446,025 B2International Business Machines Corporation · 2008
- Systems and methods for nanowire growth and harvesting127US 7,105,428 B2Nanosys, Inc. · 2006
- Nanoscale wires and related devices98US 7,301,199 B2President and Fellows of Harvard College · 2007