Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device

An electronic device, comprising:

• a solid body of 4H-SiC having a first electrical conductivity;
• at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity extending at a front side of the solid body;
• a 3C-SiC layer on the front side;
• and
• an ohmic contact region through an entire thickness of the 3C-SiC layer, up to reaching the implanted region.

An electronic device, comprising:

• a body of 4H-SiC having a first conductivity type;
• an implanted region of a second conductivity type in the body extending from a top surface of the body;
• a layer of 3C-SiC on the top surface of the body;
• a layer of silicon on the layer of 3C-SiC;
• an ohmic contact extending through layer of 3C-SiC and the layer of silicon and contacting the implanted region;
• an anode metalization on the ohmic contact and corresponding to an anode of a Schottky diode;
• and
• a cathode metalization below the body and corresponding to a cathode of the Schottky diode.