Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device
AssigneeSTMicroelectronics S.r.l.
InventorsSimone Rascuna', Fabrizio Roccaforte, Gabriele Bellocchi, Marilena Vivona
Life of this patent
Estimating the term…
Abstract
Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.
Claims20
A method for manufacturing an electronic device, the method comprising:
- forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity;
- forming, on the front side, a 3C-SiC layer;
- and
- forming, in the 3C-SiC layer, an ohmic contact region extending through an entire thickness of the 3C-SiC layer, up to reaching the implanted region.
A method, comprising:
- forming a body of SiC having a first crystal structure and a first conductivity type;
- forming
- forming an implanted region having a second electrical conductivity opposite to the first electrical conductivity at a front surface of the body of SiC;
- forming, on the front surface of the body of SiC, a layer of SiC having a second crystal structure different from the first crystal structure;
- and
- forming an ohmic contact region extending from a front surface of the layer of SiC to the implanted region at a back surface of the layer of SiC;
- forming a first metalization layer over the layer of SiC;
- and
- forming a second metalization layer below the body of SiC.
A method, comprising:
- forming a body of 4H-SiC having a first conductivity type;
- forming an implanted region of a second conductivity type in the body extending from a top surface of the body;
- forming a layer of 3C-SiC on the top surface of the body;
- forming a layer of silicon on the layer of 3C-SiC;
- forming an ohmic contact extending through layer of 3C-SiC and the layer of silicon and contacting the implanted region;
- forming an anode metalization on the ohmic contact and corresponding to an anode of a Schottky diode;
- and
- forming a cathode metalization below the body and corresponding to a cathode of the Schottky diode.
Dependencies are inferred from the claim text.