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US 12,266,526 B2Granted
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMartin Christopher Holland
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.
Claims20
A semiconductor device, comprising:
- a template layer over a substrate, the template layer comprising a dielectric material;
- a first transistor comprising:
- a first buffer structure over a bottom surface of a first trench in the template layer;
- a first single crystal semiconductor structure over the first buffer structure, the first single crystal semiconductor structure comprising a p-channel material;
- a first gate structure over a channel portion of the first single crystal semiconductor structure;
- and
- first source/drain structures on opposite sides of the first gate structure;
- and
- a second transistor comprising:
- a second buffer structure over a bottom surface of a second trench in the template layer;
- a second single crystal semiconductor structure over the second buffer structure, the second single crystal semiconductor structure comprising an n-channel material;
- a second gate structure over a channel portion of the second single crystal semiconductor structure;
- and
- second source/drain structures on opposite sides of the second gate structure,
- wherein a depth of each of the first trench and the second trench is less than a thickness of the template layer such that sidewalls and a bottom of each of the first buffer structure and the second buffer structure are in contact with the template layer.
12 more elements
A semiconductor device, comprising:
- a template layer disposed over a substrate and comprising a first trench and a second trench therein;
- a first buffer structure over a bottom surface of the first trench and a second buffer structure over a bottom surface of the second trench;
- a first transistor comprising:
- a first single crystal semiconductor structure over the first buffer structure, the first single crystal semiconductor structure comprising a first semiconductor material;
- a first gate structure over a channel portion of the first single crystal semiconductor structure;
- and
- first source/drain structures on opposite sides of the first gate structure;
- and
- a second transistor comprising
- a second single crystal semiconductor structure over the second buffer structure, the second single crystal semiconductor structure comprising a second semiconductor material different from the first semiconductor material;
- a second gate structure over a channel portion of the second single crystal semiconductor structure;
- and
- second source/drain structures on opposite sides of the second gate structure.
10 more elements
A semiconductor device, comprising:
- a template layer disposed over a substrate and having a plurality of trenches therein, wherein the template layer comprises a dielectric material
- a first transistor comprising:
- a first single crystal semiconductor structure disposed within a first trench of the plurality of trenches, the first single crystal semiconductor structure comprising silicon;
- a first buffer structure beneath the first single crystal semiconductor structure;
- a first gate structure over a first channel region of the first single crystal semiconductor structure;
- and
- first source/drain regions in portions of the first single crystal semiconductor structure laterally surrounding the first channel region, the first source/drain regions comprising dopants of a first conductivity type;
- and
- a second transistor comprising:
- a second single crystal semiconductor structure disposed within a second trench of the plurality of trenches, the second single crystal semiconductor structure comprising germanium;
- a second buffer structure beneath the second single crystal semiconductor structure;
- a second gate structure over a second channel region of the second single crystal semiconductor structure;
- and
- second source/drain regions in portions of the second single crystal semiconductor structure laterally surrounding the second channel region, the second source/drain regions comprising dopants of a second conductivity type different from the first conductivity type.
11 more elements
Dependencies are inferred from the claim text.