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AssigneePresident and Fellows of Harvard College
InventorsCharles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
An electrical component comprising a plurality of field-effect transistors each comprising first and second electrodes and a non-nanotube semiconductor nanoscale wire electrically coupling the first and second electrodes, wherein each of the nanoscale wires of the component comprises at least one portion having a smallest width of less than 500 nanometers, and wherein each of the nanoscale wires of the component is taken from a population of nanoscale wires having a variation in average diameter of less than 20% relative to each other, the population of nanoscale wires being grown catalytically from a population of catalyst particles having a variation in diameter of less than 20%, wherein the diameter of each of the nanoscale wires is determined by the diameter of the catalyst particle from which the nanoscale wire is grown, and wherein each of the nanoscale wires is doped during growth of the nanoscale wire from the catalyst particle.
A device, comprising:
A device comprising a plurality of doped semiconductors, wherein each of the doped semiconductors of the device is at least one of the following:
An electrical device comprising a plurality of field effect transistors, each field effect transistor comprising:
Dependencies are inferred from the claim text.