Assembly for the deposition of silicon nanostructures
AssigneeUniversita' Degli Studi Di Roma “La Sapienza”
InventorFabrizio Palma
Life of this patent
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Abstract
An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.
Claims8
An assembly (1) for the deposition of silicon nanostructures comprising a deposition chamber (2), which is defined by a side wall (3) and by two end walls (4);
- said assembly (1) being characterized in that it comprises:
- a microwave generator (5), which is adapted to generate microwaves inside the deposition chamber (2), an electromagnetic termination wall (8), made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber (2), and a substrate-carrier support (9), which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures;
- said substrate-carrier support (9) being arranged inside the deposition chamber (2) above said termination wall (8);
- and a metal layer arranged on a substrate (S) where the deposition is going to take place;
- said metal layer being arranged so as to cover a surface of the substrate (S) where the growth of nanowires is not wanted.
Dependencies are inferred from the claim text.