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US 11,784,045 B2Granted
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMartin Christopher Holland
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Abstract
A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.
Claims20
A semiconductor device, comprising:
- a template layer disposed over a substrate and having a trench therein;
- a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide;
- a single crystal semiconductor structure disposed within the trench and over the buffer structure;
- and
- a gate structure disposed over a channel region of the single crystal semiconductor structure.
2 more elements
A semiconductor device, comprising:
- a template layer disposed over a substrate and having a trench therein, wherein the substrate comprises a semiconductor material and the template layer comprises a dielectric material;
- a single crystal semiconductor structure disposed within the trench;
- and
- a transistor comprising a gate structure over a channel region of the single crystal semiconductor structure and source/drain regions on opposite of the gate structures;
- wherein a depth of the trench is less than a thickness of the template layer such that sidewalls and a bottom of the single crystal semiconductor structure are in contact with the template layer.
2 more elements
A semiconductor device, comprising:
- a template layer disposed over a substrate and having a trench therein, wherein the template layer comprises a dielectric material;
- a single crystal semiconductor structure disposed within the trench;
- a buffer structure between the single crystal semiconductor structure and the substrate;
- a gate structure over a channel region of the single crystal semiconductor structure;
- and
- source/drain regions in portions of the single crystal semiconductor structure laterally surrounding the channel region.
3 more elements
Dependencies are inferred from the claim text.