H10P 14/271
Characterised by the preparation of substrate for selective deposition
Official title: {characterised by the preparation of substrate for selective deposition}
H10P14/271 (Characterised by the preparation of substrate for selective deposition) appears on 3,113 US grants and 3,229 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,113
- Published applications
- 3,229
- Assignees
- 744
- Inventors
- 5,079
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 6 | 0 |
| 1978 | 7 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 5 | 0 |
| 1984 | 7 | 0 |
| 1985 | 16 | 0 |
| 1986 | 13 | 0 |
| 1987 | 11 | 0 |
| 1988 | 11 | 0 |
| 1989 | 16 | 0 |
| 1990 | 14 | 0 |
| 1991 | 21 | 0 |
| 1992 | 30 | 0 |
| 1993 | 31 | 0 |
| 1994 | 45 | 0 |
| 1995 | 24 | 0 |
| 1996 | 18 | 0 |
| 1997 | 16 | 0 |
| 1998 | 29 | 0 |
| 1999 | 30 | 0 |
| 2000 | 22 | 0 |
| 2001 | 34 | 25 |
| 2002 | 50 | 60 |
| 2003 | 44 | 63 |
| 2004 | 51 | 69 |
| 2005 | 56 | 101 |
| 2006 | 63 | 103 |
| 2007 | 59 | 122 |
| 2008 | 66 | 120 |
| 2009 | 77 | 114 |
| 2010 | 117 | 132 |
| 2011 | 94 | 166 |
| 2012 | 116 | 185 |
| 2013 | 136 | 144 |
| 2014 | 180 | 169 |
| 2015 | 171 | 202 |
| 2016 | 205 | 190 |
| 2017 | 215 | 223 |
| 2018 | 165 | 143 |
| 2019 | 176 | 154 |
| 2020 | 156 | 139 |
| 2021 | 98 | 142 |
| 2022 | 101 | 130 |
| 2023 | 99 | 125 |
| 2024 | 83 | 99 |
| 2025 | 77 | 85 |
| 2026 | 32 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Methods and devices for 3D NAND using silicon-and-halogen-containing materials8 Sep 2026US 12,733,164 B2APPLIED Materials.Inc.
- Method for manufacturing a nanowire using an inducing particle in a guide trench, method for manufacturing a thin film transistor, thin film transistor, and semiconductor device8 Sep 2026US 12,733,413 B2Boe Technology Group Co., Ltd.
- Gas phase treatment for manufacturing semiconductor structure8 Sep 2026US 12,733,421 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Fin structure with reduced defects and manufacturing method thereof1 Oct 2026US 2026/0305194 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Multi-Substrate Wafer with Radially Grown Substrates13 Aug 2026US 2026/0239701 A1
- Semiconductor material and method for preparing the same6 Aug 2026US 2026/0231698 A1National Tsing Hua University
- Substrate processing method or system for the method, and a semiconductor device production method16 Jul 2026US 2026/0206500 A1Postech Research and Business Development Foundation
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013