Multi-Substrate Wafer with Radially Grown Substrates

A method for the production of a multi-substrate wafer, comprising the steps:

• providing a first substrate
• wherein the first substrate is a monocrystalline SiC crystal,
• wherein the monocrystalline SiC crystal is formed by a crystal structure, wherein the crystal structure defines a c-axis, wherein the crystal structure is grown perpendicular to the c-axis,
• wherein the monocrystalline SiC crystal has a flat top surface, a flat bottom surface and a connecting-surface connecting the top surface and bottom surface,
• wherein the c-axis is aligned in an angle between 0° and 8° with respect to a normal on the top surface
• providing a second substrate
• wherein the second substrate consists of polycrystalline 3C—SiC,
• wherein the at least 60% [volume] of the polycrystalline SiC is grown in radial direction,
• wherein the second substrate has a specific electrical resistance of less than 15 mOhm-cm,
• bonding the first substrate and the second substrate together.