Semiconductor material and method for preparing the same

A method for preparing a semiconductor material, comprising:

• ablating a first chalcogenide material by a power source at a first frequency to form a plurality of first chalcogenide units;
• depositing the first chalcogenide units on a substrate to form a base layer;
• forming at least one masking layer on the base layer, wherein a portion of a surface of the base layer is exposed outside the at least one masking layer;
• ablating a second chalcogenide material by the power source at a second frequency to form a plurality of second chalcogenide units;
• depositing the second chalcogenide units on the portion of the surface of the base layer to form at least one doping area;
• and
• removing the at least one masking layer to obtain the semiconductor material.