H10P 14/272
Using mask materials other than sio2 or sin
Official title: {using mask materials other than SiO2 or SiN}
H10P14/272 (Using mask materials other than sio2 or sin) appears on 459 US grants and 546 published applications in this corpus.
Search patents in H10P- Granted patents
- 459
- Published applications
- 546
- Assignees
- 205
- Inventors
- 998
- Latest grant
- 29 Sep 2026
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| Year | Granted patents | Published applications |
|---|---|---|
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| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
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| 2000 | 2 | 0 |
| 2001 | 5 | 4 |
| 2002 | 6 | 11 |
| 2003 | 9 | 10 |
| 2004 | 12 | 12 |
| 2005 | 11 | 19 |
| 2006 | 12 | 18 |
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| 2018 | 19 | 22 |
| 2019 | 25 | 20 |
| 2020 | 19 | 16 |
| 2021 | 10 | 26 |
| 2022 | 9 | 23 |
| 2023 | 17 | 22 |
| 2024 | 18 | 26 |
| 2025 | 22 | 22 |
| 2026 | 4 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Multi-regional epitaxial growth and related systems and articles16 Jun 2026US 12,660,519 B2Massachusetts Institute of Technology
- Topology-selective nitride deposition method and structure formed using same21 Apr 2026US 12,610,759 B2ASM IP Holding B. V.
- Method and system for fabricating regrown fiducials for semiconductor devices3 Mar 2026US 12,568,828 B2Semiconductor Components Industries, LLC
- Selective passivation and selective deposition25 Nov 2025US 12,482,648 B2ASM IP Holding B. V.
- Semiconductor material and method for preparing the same6 Aug 2026US 2026/0231698 A1National Tsing Hua University
- Large-area semiconductor device realized through a single domain and method of manufacturing the same25 Jun 2026US 2026/0182265 A1Myongji University Industry and Academia Cooperation Foundation
- Topology-selective nitride deposition method and structure formed using same11 Jun 2026US 2026/0165044 A1ASM IP Holding B. V.
- Semiconductor substrate, template substrate, and method and apparatus for manufacturing template substrate28 May 2026US 2026/0150687 A1KYOCERA Corporation
- Semiconductor Exfoliation Method12 Mar 2026US 2026/0076157 A1ThinSiC Inc.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015
- Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure355US 6,201,262 B1Cree, Inc. · 2001
- Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure286US 6,187,606 B1Cree, Inc. · 2001
- Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates155US 6,521,514 B1North Carolina State University · 2003