Topology-selective nitride deposition method and structure formed using same
AssigneeASM IP Holding B.V.
InventorTimothee Blanquart
Life of this patent
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Abstract
A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.
Claims20
An apparatus, the apparatus comprising:
- a reaction chamber;
- a substrate support configured to support a substrate;
- a first nitrogen-containing gas source configured to provide a first nitrogen-containing gas to the reaction chamber;
- a second nitrogen-containing gas source configured to provide a second nitrogen-containing gas to the reaction chamber, wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ;
- a precursor gas source configured to provide a precursor gas to the reaction chamber;
- and
- a controller configured to control components of the apparatus to:
- provide the first nitrogen-containing gas to the reaction chamber for a first time period,
- provide the second nitrogen-containing gas for a second time period, and
- provide the precursor gas to the reaction chamber for a third time period,
- wherein the third time period is after the first time period, and wherein the second time period begins after a start of the first time period and ceases at or after the third time period ends.
An apparatus, the apparatus comprising:
- a reaction chamber;
- a substrate support configured to support a substrate;
- a first nitrogen-containing gas source configured to provide a first nitrogen-containing gas to the reaction chamber;
- a second nitrogen-containing gas source configured to provide a second nitrogen-containing gas to the reaction chamber, wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ;
- a precursor gas source configured to provide a precursor gas to the reaction chamber;
- and
- a controller configured to control components of the apparatus to:
- provide the first nitrogen-containing gas to the reaction chamber for a first time period,
- provide the second nitrogen-containing gas for a second time period, and
- provide the precursor gas to the reaction chamber for a third time period,
- wherein the third time period is after the second time period, wherein the first time period begins after a start of the second time period, and wherein the first time period ceases at or after the third time period ends.
An apparatus, the apparatus comprising:
- a reaction chamber;
- a substrate support configured to support a substrate;
- a first nitrogen-containing gas source configured to provide a first nitrogen-containing gas to the reaction chamber;
- a second nitrogen-containing gas source configured to provide a second nitrogen-containing gas to the reaction chamber, wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ;
- a precursor gas source configured to provide a precursor gas to the reaction chamber;
- and
- a controller configured to control components of the apparatus to:
- provide the first nitrogen-containing gas to the reaction chamber for a first time period,
- provide the second nitrogen-containing gas for a second time period, and
- provide the precursor gas to the reaction chamber for a third time period,
- wherein the third time period is after a start of the first time period and after a start of the second time period, and wherein the first time period and the second time period at least partially overlap.
Dependencies are inferred from the claim text.