Loading patent…
AssigneeThinSiC Inc.
InventorsTirunelveli Subramaniam Ravi, Stephen Daniel Miller, Jeffrey Scott Pietkiewicz, Kelly Marie Moyers
Estimating the term…
A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.
A method of exfoliating a plurality of devices from a reuseable substrate comprising:
A method of exfoliating a plurality of devices from a reuseable substrate comprising heating a material within a patterned layer by one or more lasers wherein the patterned layer is between the reuseable substrate and the plurality of devices and wherein the material heats to a temperature that vaporizes or partially vaporizes at least a portion of the patterned layer to support separation of the epitaxial substrate from the reuseable substrate.
A method of exfoliating a plurality of devices from a reuseable substrate comprising:
Dependencies are inferred from the claim text.