Topology-selective nitride deposition method and structure formed using same
AssigneeASM IP Holding B.V.
InventorTimothee Blanquart
Life of this patent
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Abstract
A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.
Claims20
A topology-selective deposition method comprising the steps of:
- providing a substrate comprising patterned structures on a surface of the substrate, the patterned structures each comprising a top surface, a bottom surface, and a sidewall surface therebetween;
- performing an inhibition step for a first time period, wherein the inhibition process comprises providing an inhibition agent comprising a first nitrogen-containing gas for the first time period to form an inhibited surface on one or more of the top surface, the bottom surface, and the sidewall surface;
- performing an activation step comprising providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of the top surface, the bottom surface, and the sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface;
- and
- performing a formation step after the inhibition process and the activation process, providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface,
- wherein the deposition promotion agent is provided after the start of the first time period and throughout the formation step,
- wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ.
A topology-selective deposition method comprising the steps of:
- providing a substrate comprising patterned structures on a surface of the substrate, the patterned structures each comprising a top surface, a bottom surface, and a sidewall surface therebetween;
- performing an activation step for a first time period, the activation process comprising providing a deposition promotion agent comprising a second nitrogen-containing gas for the first time period to form an activated surface on one or more of the top surface, the bottom surface, and the sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface;
- performing an inhibition step comprising providing an inhibition agent comprising a first nitrogen-containing gas after the first time period to form an inhibited surface on one or more of the top surface, the bottom surface, and the sidewall surface;
- and
- performing a formation step after the first time period, providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface,
- wherein the inhibition agent is provided throughout the inhibition step and the formation step,
- wherein the first nitrogen-containing gas and the second nitrogen-containing gas differ.
Dependencies are inferred from the claim text.