H10P 14/274
Using seed materials
Official title: {using seed materials}
H10P14/274 (Using seed materials) appears on 551 US grants and 612 published applications in this corpus.
Search patents in H10P- Granted patents
- 551
- Published applications
- 612
- Assignees
- 262
- Inventors
- 1,198
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 4 |
| 2003 | 3 | 6 |
| 2004 | 1 | 4 |
| 2005 | 5 | 14 |
| 2006 | 8 | 17 |
| 2007 | 12 | 20 |
| 2008 | 13 | 25 |
| 2009 | 14 | 30 |
| 2010 | 25 | 36 |
| 2011 | 22 | 38 |
| 2012 | 18 | 27 |
| 2013 | 27 | 19 |
| 2014 | 29 | 32 |
| 2015 | 28 | 40 |
| 2016 | 33 | 41 |
| 2017 | 42 | 44 |
| 2018 | 32 | 25 |
| 2019 | 34 | 30 |
| 2020 | 38 | 33 |
| 2021 | 19 | 31 |
| 2022 | 18 | 26 |
| 2023 | 24 | 28 |
| 2024 | 18 | 21 |
| 2025 | 15 | 15 |
| 2026 | 7 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate1 Sep 2026US 12,727,450 B2Icemos Technology Ltd.
- Fin structure with reduced defects and manufacturing method thereof4 Aug 2026US 12,701,934 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of a SiC wafer with residual stress control28 Jul 2026US 12,696,693 B2STMicroelectronics S,r.l.
- Manufacturing method for device embedded packaging structure30 Jun 2026US 12,672,529 B2Zhuhai ACCESS Semiconductor Co., Ltd.
- Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same5 May 2026US 12,618,172 B2Shin-Etsu Chemical Co., Ltd.
- Fin structure with reduced defects and manufacturing method thereof1 Oct 2026US 2026/0305194 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-Substrate Wafer with Radially Grown Substrates13 Aug 2026US 2026/0239701 A1
- Semiconductor device including seed layer and method for manufacturing the same2 Jul 2026US 2026/0190402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Topology-selective nitride deposition method and structure formed using same11 Jun 2026US 2026/0165044 A1ASM IP Holding B. V.
- Ferroelectric field-effect transistor device and method for manufacturing the same16 Apr 2026US 2026/0107518 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowires, nanostructures and devices fabricated therefrom394US 6,882,051 B2The Regents of the University of California · 2005
- Methods of fabricating nanostructures and nanowires and devices fabricated therefrom247US 6,996,147 B2The Regents of the University of California · 2006
- Method of forming vertical FET with nanowire channels and a silicided bottom contact139US 7,446,025 B2International Business Machines Corporation · 2008
- Systems and methods for nanowire growth and harvesting127US 7,105,428 B2Nanosys, Inc. · 2006
- Catalyst patterning for nanowire devices115US 6,831,017 B1Integrated Nanosystems, Inc. · 2004