Ferroelectric field-effect transistor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Kun Dai, I-Cheng Chang, Yen-Chieh Huang, Yu-Ming Lin
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Abstract
A method of manufacturing a field-effect transistor device includes forming a bottom electrode, forming a ferroelectric layer over the bottom electrode, forming a seed layer over the ferroelectric layer, forming a channel layer on the seed layer, and forming source/drain electrodes at sidewalls of the channel layer. The seed layer is formed by using a physical vapor deposition (PVD) process, and the seed layer has a quasi-crystalline structure. The channel layer has a spinel structure.
Claims20
A method of manufacturing a field-effect transistor device, comprising:
- forming a bottom electrode;
- forming a ferroelectric layer over the bottom electrode;
- forming a quasi-crystalline seed layer over the ferroelectric layer;
- forming a channel layer on the quasi-crystalline seed layer, wherein the channel layer has a spinel structure;
- and
- forming source/drain electrodes at sidewalls of the channel layer.
A method of manufacturing a field-effect transistor device, comprising:
- forming a bottom electrode;
- forming a ferroelectric layer over the bottom electrode;
- forming a seed layer over the ferroelectric layer using a physical vapor deposition (PVD) process, wherein the seed layer has a spinel structure;
- forming a channel layer on the seed layer;
- and
- forming source/drain electrodes at sidewalls of the channel layer.
A field-effect transistor device, comprising:
- a bottom electrode;
- a ferroelectric layer formed over the bottom electrode;
- a quasi-crystalline seed layer formed over the ferroelectric layer;
- a channel layer formed on the quasi-crystalline seed layer, wherein the channel layer has a spinel structure;
- and
- source/drain electrodes, disposed at two sides of the channel layer over the ferroelectric layer.
Dependencies are inferred from the claim text.