Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate

A method of making a semiconductor device, comprising:

• providing a structured substrate consisting essentially of a first semiconductor material and a patterned structure formed as a first surface of the structured substrate;
• forming a sacrificial layer consisting essentially of a second semiconductor material dissimilar from the first semiconductor material, wherein the surface of the sacrificial layer contacts the first surface of the structured substrate;
• forming a first semiconductor layer comprising the second semiconductor material in contact with the sacrificial layer;
• removing the structured substrate and sacrificial layer leaving the first semiconductor layer substantially defect-free;
• forming a second semiconductor layer over the first semiconductor layer;
• and
• forming an electrical component in the second semiconductor layer by,
• (a) forming a trench through the second semiconductor layer and extending into the first semiconductor layer,
• (b) forming a first column of semiconductor material having a first conductivity type adjacent to the trench,
• (c) forming a second column of semiconductor material having a second conductivity type opposite the first conductivity type in contact with the first column of semiconductor material opposite the trench, and
• (d) forming a source region over the first column of semiconductor material.

A method of making a semiconductor device, comprising:

• providing a structured substrate consisting essentially of a first semiconductor material and a patterned structure formed as a first surface of the structured substrate;
• forming a sacrificial layer comprising a second semiconductor material dissimilar from the first semiconductor material over the first surface of the structured substrate;
• forming a first semiconductor layer comprising the second semiconductor material over the sacrificial layer, wherein the first semiconductor layer is substantially defect-free;
• removing the structured substrate and sacrificial layer leaving the first semiconductor layer substantially defect-free;
• forming a second semiconductor layer over the first semiconductor layer;
• and
• forming an electrical component in the second semiconductor layer by,
• (a) forming a trench through the second semiconductor layer and extending into the first semiconductor layer,
• (b) forming a first column of semiconductor material having a first conductivity type adjacent to the trench,
• (c) forming a second column of semiconductor material having a second conductivity type opposite the first conductivity type in contact with the first column of semiconductor material opposite the trench, and
• (d) forming a source region over the first column of semiconductor material.