Semiconductor device with nanowire heterojunction and manufacturing method thereof

A manufacturing method for a semiconductor device, comprising:

• providing a substrate, the substrate comprising a first region, and a second region and a third region located on respective sides of the first region;
• forming a first support structure at least on the second region and the third region;
• forming a first sacrificial layer on the substrate exposed by the first support structure;
• growing a first nanowire heterojunction on the first support structure and the first sacrificial layer, the first nanowire heterojunction comprising a first gate section corresponding to the first region, a first source section corresponding to the second region, and a first drain section corresponding to the third region;
• the first source section and the first drain section being located on the first support structure, at least the first gate section being located on the first sacrificial layer;
• removing the first sacrificial layer to suspend the first nanowire heterojunction;
• and
• forming a source on the first source section, forming a drain on the first drain section, and forming a ring-shaped gate wrapping the first gate section,
• wherein the first nanowire heterojunction is a continuous structural layer that extends at least through the source, the ring-shaped gate and the drain, and the first nanowire heterojunction comprises, from bottom to top, a first channel layer and a first barrier layer that are continuously extending along a length direction of the first nanowire heterojunction,
• wherein the first nanowire heterojunction comprises a first back barrier layer, the first channel layer, and the first barrier layer from bottom to top;
• and the first nanowire heterojunction is wrapped by a first anti-scattering layer.