H10P 14/32
Characterised by intermediate layers between substrates and deposited layers
Official title: {characterised by intermediate layers between substrates and deposited layers}
H10P14/32 (Characterised by intermediate layers between substrates and deposited layers) appears on 9,178 US grants and 9,934 published applications in this corpus.
Search patents in H10P- Granted patents
- 9,178
- Published applications
- 9,934
- Assignees
- 1,805
- Inventors
- 13,163
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 21 | 0 |
| 1977 | 17 | 0 |
| 1978 | 18 | 0 |
| 1979 | 15 | 0 |
| 1980 | 19 | 0 |
| 1981 | 13 | 0 |
| 1982 | 10 | 0 |
| 1983 | 12 | 0 |
| 1984 | 20 | 0 |
| 1985 | 24 | 0 |
| 1986 | 30 | 0 |
| 1987 | 54 | 0 |
| 1988 | 39 | 0 |
| 1989 | 74 | 0 |
| 1990 | 43 | 0 |
| 1991 | 61 | 0 |
| 1992 | 63 | 0 |
| 1993 | 62 | 0 |
| 1994 | 74 | 0 |
| 1995 | 79 | 0 |
| 1996 | 72 | 0 |
| 1997 | 69 | 0 |
| 1998 | 102 | 0 |
| 1999 | 116 | 0 |
| 2000 | 127 | 0 |
| 2001 | 159 | 93 |
| 2002 | 188 | 315 |
| 2003 | 231 | 396 |
| 2004 | 249 | 321 |
| 2005 | 234 | 356 |
| 2006 | 253 | 389 |
| 2007 | 218 | 367 |
| 2008 | 226 | 293 |
| 2009 | 257 | 245 |
| 2010 | 277 | 375 |
| 2011 | 272 | 450 |
| 2012 | 310 | 499 |
| 2013 | 349 | 435 |
| 2014 | 480 | 550 |
| 2015 | 470 | 504 |
| 2016 | 512 | 493 |
| 2017 | 440 | 482 |
| 2018 | 396 | 436 |
| 2019 | 441 | 481 |
| 2020 | 428 | 432 |
| 2021 | 308 | 403 |
| 2022 | 270 | 389 |
| 2023 | 285 | 414 |
| 2024 | 297 | 387 |
| 2025 | 248 | 292 |
| 2026 | 146 | 137 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Diffusion barrier for semiconductor device and method29 Sep 2026US 12,751,270 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diffusion barrier for semiconductor device and method1 Oct 2026US 2026/0305302 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Power routing module with a switching matrix for a solar cell array24 Sep 2026US 2026/0293325 A1The Boeing Company
- Silicon nitride etching composition and method17 Sep 2026US 2026/0275191 A1Entegris, Inc.
- Heteroepitaxial growth method of compound semiconductor materials on multi-oriented semiconductor substrates and devices17 Sep 2026US 2026/0282771 A1King Abdullah University of Science and Technology
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013