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US 2026/0282771 A1Published application
Heteroepitaxial growth method of compound semiconductor materials on multi-oriented semiconductor substrates and devices
AssigneeKing Abdullah University of Science and Technology
InventorsNasir ALFARAJ, Kuang-Hui LI, Laurentiu BRAIC, Adrian Emil KISS, Nicolae Catalin ZOITA
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Abstract
A method for growing a semiconductor material over a Si-based substrate includes providing the Si-based substrate; growing a monocrystalline refractory-metal ceramic film directly over the Si-based substrate; and depositing a semiconductor film directly over the monocrystalline refractory-metal ceramic film. The monocrystalline refractory-metal ceramic film has a thickness less than 300 nm.
Claims8
A method for growing a semiconductor material over a Si-based substrate, the method comprising:
- providing the Si-based substrate;
- growing a monocrystalline refractory-metal ceramic film directly over the Si-based substrate;
- and
- depositing a semiconductor film directly over the monocrystalline refractory-metal ceramic film,
- wherein the monocrystalline refractory-metal ceramic film has a thickness less than 300 nm.
2 more elements
8-20. (canceled)
Dependencies are inferred from the claim text.