H10P 14/3202
Materials thereof
Official title: {Materials thereof}
H10P14/3202 (Materials thereof) appears on 8,944 US grants and 9,665 published applications in this corpus.
Search patents in H10P- Granted patents
- 8,944
- Published applications
- 9,665
- Assignees
- 1,771
- Inventors
- 12,833
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 16 | 0 |
| 1978 | 18 | 0 |
| 1979 | 15 | 0 |
| 1980 | 19 | 0 |
| 1981 | 13 | 0 |
| 1982 | 10 | 0 |
| 1983 | 11 | 0 |
| 1984 | 19 | 0 |
| 1985 | 24 | 0 |
| 1986 | 30 | 0 |
| 1987 | 52 | 0 |
| 1988 | 39 | 0 |
| 1989 | 74 | 0 |
| 1990 | 43 | 0 |
| 1991 | 61 | 0 |
| 1992 | 63 | 0 |
| 1993 | 61 | 0 |
| 1994 | 72 | 0 |
| 1995 | 79 | 0 |
| 1996 | 72 | 0 |
| 1997 | 69 | 0 |
| 1998 | 102 | 0 |
| 1999 | 116 | 0 |
| 2000 | 127 | 0 |
| 2001 | 158 | 92 |
| 2002 | 185 | 311 |
| 2003 | 229 | 395 |
| 2004 | 246 | 320 |
| 2005 | 233 | 355 |
| 2006 | 253 | 388 |
| 2007 | 218 | 362 |
| 2008 | 225 | 290 |
| 2009 | 257 | 239 |
| 2010 | 272 | 365 |
| 2011 | 268 | 444 |
| 2012 | 304 | 493 |
| 2013 | 345 | 427 |
| 2014 | 469 | 531 |
| 2015 | 454 | 488 |
| 2016 | 492 | 478 |
| 2017 | 426 | 459 |
| 2018 | 377 | 413 |
| 2019 | 419 | 457 |
| 2020 | 405 | 405 |
| 2021 | 292 | 390 |
| 2022 | 252 | 380 |
| 2023 | 273 | 399 |
| 2024 | 284 | 371 |
| 2025 | 241 | 282 |
| 2026 | 142 | 131 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/3214Being group iiia-va semiconductors3,970
- H10P 14/3238Being insulating materials2,715
- H10P 14/3204Being group iva semiconducting materials2,521
- H10P 14/3241Being conductive materials789
- H10P 14/3224Being group iib-via semiconductors387
- H10P 14/3234Being oxide semiconducting materials279
- H10P 14/3236Being chalcogenide semiconducting materials not being oxides157
Recent patents
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- Silicon nitride etching composition and method17 Sep 2026US 2026/0275191 A1Entegris, Inc.
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Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
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- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013