H10P 14/3234
Being oxide semiconducting materials
Official title: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}
H10P14/3234 (Being oxide semiconducting materials) appears on 279 US grants and 392 published applications in this corpus.
Search patents in H10P- Granted patents
- 279
- Published applications
- 392
- Assignees
- 144
- Inventors
- 634
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 1 | 3 |
| 2005 | 1 | 4 |
| 2006 | 1 | 3 |
| 2007 | 1 | 2 |
| 2008 | 2 | 1 |
| 2009 | 3 | 5 |
| 2010 | 1 | 12 |
| 2011 | 4 | 15 |
| 2012 | 7 | 13 |
| 2013 | 6 | 8 |
| 2014 | 21 | 20 |
| 2015 | 8 | 16 |
| 2016 | 23 | 26 |
| 2017 | 34 | 27 |
| 2018 | 26 | 23 |
| 2019 | 15 | 27 |
| 2020 | 14 | 18 |
| 2021 | 15 | 26 |
| 2022 | 13 | 31 |
| 2023 | 23 | 28 |
| 2024 | 26 | 42 |
| 2025 | 23 | 28 |
| 2026 | 9 | 13 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Diamond-capped gallium oxide transistor26 May 2026US 12,642,016 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,296 B2Silanna UV Technologies Pte Ltd
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,297 B2Silanna UV Technologies Pte Ltd
- III-Nitride/gallium oxide based high electron mobility transistors5 May 2026US 12,622,008 B2Northwestern University
- Method for producing a gallium oxide semiconductor film and a film forming apparatus14 Apr 2026US 12,601,054 B2Shin-Etsu Chemical Co., Ltd.
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- A method for the manufacture of a graphene-containing laminate30 Jul 2026US 2026/0223425 A1Paragraf Limited
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Semiconductor device and manufacturing method therefor16 Jul 2026US 2026/0206501 A1Jusung Engineering Co., Ltd.
- Semiconductor device, electronic device, and system28 May 2026US 2026/0150361 A1Patentix Inc.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof130US 6,225,650 B1Mitsubishi Cable Industries, Ltd. · 2001
- Method for manufacturing semiconductor device76US 8,530,285 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Method of fabricating a stacked oxide material for thin film transistor75US 8,367,489 B2Semiconductor Energy Laboratory Co.Ltd. · 2013