A method for the manufacture of a graphene-containing laminate

Abstract

There is provided a method for the manufacture of a graphene-containing laminate (240), the method comprising: (i) providing a first wafer (220) comprising a first layer (205) on a first silicon support (200), wherein the first layer (205) is a dielectric layer and has an exposed growth surface (205′) distal from the first silicon support (200), wherein the first layer (205) has a first region (205c) extending at least 2 nm down from the exposed growth surface (205′) which satisfies the following: a) 210-a dislocation density of less than 5,000 cm−2 as measured by TEM; and b) a surface roughness (Ra) of less than 1 nm as measured by AFM; (ii) providing a second wafer (235) comprising a second layer (230), wherein the second layer (230) has an exposed contact surface (230′); (iii) forming a graphene layer structure (210) on the exposed growth surface of the first layer by CVD; (iv) wafer-bonding the first wafer (220) to the exposed contact surface (230′) of the second layer (230) to sandwich the graphene layer structure (210) between the first silicon support (200) and the second layer (230); and (v) removing the first silicon support (200) to leave a retained portion of the first layer (205) formed from the first region (205c) and having a thickness of less than 20 nm.

Dependencies are inferred from the claim text.