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US 2026/0206501 A1Published application
Semiconductor device and manufacturing method therefor
AssigneeJusung Engineering Co., Ltd.
InventorsWon Tae CHO, Chul Joo HWANG
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Abstract
Provided are a semiconductor device and a method for manufacturing the same, and more specifically, to a method for manufacturing a semiconductor device including a semiconductor layer containing gallium nitride. A semiconductor device includes a glass substrate, a seed layer disposed on the glass substrate, and a semiconductor layer containing gallium nitride and disposed on the seed layer.
Claims20
A semiconductor device comprising:
- a glass substrate;
- a seed layer disposed on the glass substrate;
- and
- a semiconductor layer containing gallium nitride and disposed on the seed layer.
1 more element
A method for manufacturing a semiconductor device, the method comprising:
- preparing a glass substrate in a reaction space;
- forming a crystalline seed layer on the glass substrate;
- and
- forming a semiconductor layer containing gallium nitride on the seed layer.
1 more element
A thin film transistor comprises:
- a gate electrode disposed on a glass substrate;
- a gate insulating layer disposed on the gate electrode;
- an active layer disposed on the gate insulating layer, comprising a crystalline seed layer and a semiconductor layer containing gallium nitride and disposed on the seed layer;
- and
- a source electrode and a drain electrode spaced apart from each other on the active layer.
2 more elements
A thin film transistor comprising:
- a source electrode and a drain electrode spaced apart from each other on a glass substrate;
- an active layer extending on the source electrode and the drain electrode and comprising a crystalline seed layer and a semiconductor layer containing gallium nitride and disposed on the seed layer;
- a gate insulating layer disposed on the active layer;
- and
- a gate electrode disposed on the gate insulating layer.
2 more elements
Dependencies are inferred from the claim text.