III-Nitride/gallium oxide based high electron mobility transistors
AssigneeNorthwestern University
InventorManijeh Razeghi
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Abstract
High electron mobility transistors are provided which comprise a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween.
Claims18
A high electron mobility transistor comprising a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween, wherein the high electron mobility transistor further comprises an electrode operably connected to the interface and the high electron mobility transistor is configured to induce formation of a two-dimensional electron gas (2DEG) at the interface between the III-Nitride semiconductor layer and the gallium oxide semiconductor layer upon application of a voltage to the electrode, wherein the III-Nitride semiconductor layer comprises a first sublayer comprising AlN and a second sublayer comprising AlGaN.
A high electron mobility transistor comprising a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween, wherein the high electron mobility transistor further comprises an electrode operably connected to the interface and the high electron mobility transistor is configured to induce formation of a two-dimensional electron gas (2DEG) at the interface between the III-Nitride semiconductor layer and the gallium oxide semiconductor layer upon application of a voltage to the electrode, wherein the gallium oxide is κ-Ga2O3.
A high electron mobility transistor comprising a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween, wherein the high electron mobility transistor further comprises an electrode operably connected to the interface and the high electron mobility transistor is configured to induce formation of a two-dimensional electron gas (2DEG) at the interface between the III-Nitride semiconductor layer and the gallium oxide semiconductor layer upon application of a voltage to the electrode, wherein the gallium oxide semiconductor layer is doped with a group IV element.
A high electron mobility transistor comprising a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween, wherein the high electron mobility transistor further comprises an electrode operably connected to the interface and the high electron mobility transistor is configured to induce formation of a two-dimensional electron gas (2DEG) at the interface between the III-Nitride semiconductor layer and the gallium oxide semiconductor layer upon application of a voltage to the electrode, wherein the gallium oxide semiconductor layer consists of Si-doped Ga2O3.
A high electron mobility transistor comprising a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween, wherein the high electron mobility transistor further comprises an electrode operably connected to the interface and the high electron mobility transistor is configured to induce formation of a two-dimensional electron gas (2DEG) at the interface between the III-Nitride semiconductor layer and the gallium oxide semiconductor layer upon application of a voltage to the electrode, further comprising a substrate, wherein the III-Nitride semiconductor layer is between the gallium oxide semiconductor layer and the substrate.
Dependencies are inferred from the claim text.