Method for producing a gallium oxide semiconductor film and a film forming apparatus

A film forming apparatus comprising at least,

• a mist-forming unit that turns a raw material solution into mist and generates mist,
• a carrier gas supply unit for supplying a carrier gas for transferring the mist,
• a supply pipe that connects the mist-forming unit and a film forming chamber, and through which the mist is transferred by the carrier gas,
• the film forming chamber for heat-treating the mist supplied together with the carrier gas from a supply port to form a film on a substrate mounted on a substrate mounting portion,
• wherein,
• heating means for heating the substrate and heat-treating the mist is provided under the substrate mounted on the substrate mounting portion,
• inside the film forming chamber,
• a middle plate that rectifies flow of the mist and the carrier gas,
• and an exhaust pipe for exhausting waste gas, are provided,
• and wherein,
• the middle plate is positioned above the substrate mounting portion and between the supply port and the substrate mounting portion, and is installed so as to have a gap from a side wall of the film forming chamber and have a gap of 0.5 to 10 mm from the substrate,
• the exhaust pipe is connected to an opening in a surface of the middle plate facing the substrate mounting portion, extends upward from the middle plate, and is provided to penetrate a wall of the film forming chamber,
• and the flow of the mist supplied from the supply port to the film forming chamber together with the carrier gas is rectified by the middle plate so as to flow along a surface of the substrate, and the film is formed on the substrate, and
• relative positions of the middle plate, the opening at the lower end of the exhaust pipe, and the substrate is capable of change during film formation.